| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-257 - C4-260 | |
| DOI | https://doi.org/10.1051/jphyscol:1981454 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-257-C4-260
DOI: 10.1051/jphyscol:1981454
Carnegie Laboratory of Physics, the University, Dundee DDL 4HN, Scotland, U.K.
J. Phys. Colloques 42 (1981) C4-257-C4-260
DOI: 10.1051/jphyscol:1981454
ELECTRONIC PROPERTIES OF MICROCRYSTALLINE SILICON FILMS PREPARED IN A GLOW DISCHARGE PLASMA
W.E. Spear, G. Willeke, P.G. Le Comber and A.G. FitzgeraldCarnegie Laboratory of Physics, the University, Dundee DDL 4HN, Scotland, U.K.
Abstract
The properties of glow discharge µc Si have been investigated by conductivity, Hall effect and field effect measurements as a function of crystallite size and phosphorus doping ratio. It is concluded that the large increase in σ over a-Si is almost entirely caused by an increased carrier density resulting from delocalised electron tail states. The sign of the Hall constant remains normal down to an extrapolated crystallite size of about 20A.