J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|Page(s)||C4-221 - C4-224|
J. Phys. Colloques 42 (1981) C4-221-C4-224
EXAFS STUDIES ON THE LOCAL STRUCTURE IN AMORPHOUS GeS AND GeSeH. Oyanagi1, K. Tanaka1, S. Hosoya2 and S. Minomura2
1 Electrotechnical Laboratory, 1-1-4 Umezono, Sakura-mura, Niihari-gun, Ibaraki 305, Japan
2 Institute for Solid State Physics, Tokyo University, Roppongi, Minato-ku, Tokyo 106, Japan
The local structures of amorphous GeS and GeSe were studied using EXAFS and XPS in order to distinguish 3-3 from 4-2 coordination, Data analyses for Ge K-shell EXAFS for amorphous GeS indicated the evidence of 3-fold coordination of Ge atom. Experimental EXAFS spectrum was fitted best by the simulation when the chemical ordering around Ge atom is assumed. A new local structure model based on stacking of a short-range double-layer unit is presented.