| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-221 - C4-224 | |
| DOI | https://doi.org/10.1051/jphyscol:1981446 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-221-C4-224
DOI: 10.1051/jphyscol:1981446
1 Electrotechnical Laboratory, 1-1-4 Umezono, Sakura-mura, Niihari-gun, Ibaraki 305, Japan
2 Institute for Solid State Physics, Tokyo University, Roppongi, Minato-ku, Tokyo 106, Japan
J. Phys. Colloques 42 (1981) C4-221-C4-224
DOI: 10.1051/jphyscol:1981446
EXAFS STUDIES ON THE LOCAL STRUCTURE IN AMORPHOUS GeS AND GeSe
H. Oyanagi1, K. Tanaka1, S. Hosoya2 and S. Minomura21 Electrotechnical Laboratory, 1-1-4 Umezono, Sakura-mura, Niihari-gun, Ibaraki 305, Japan
2 Institute for Solid State Physics, Tokyo University, Roppongi, Minato-ku, Tokyo 106, Japan
Abstract
The local structures of amorphous GeS and GeSe were studied using EXAFS and XPS in order to distinguish 3-3 from 4-2 coordination, Data analyses for Ge K-shell EXAFS for amorphous GeS indicated the evidence of 3-fold coordination of Ge atom. Experimental EXAFS spectrum was fitted best by the simulation when the chemical ordering around Ge atom is assumed. A new local structure model based on stacking of a short-range double-layer unit is presented.