Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-1055 - C4-1058
DOI https://doi.org/10.1051/jphyscol:19814231
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-1055-C4-1058

DOI: 10.1051/jphyscol:19814231

NUCLEAR QUADRUPOLAR RELAXATION IN LIQUID Ga-Te ALLOYS

R. Brinkmann1, M. Elwenspoek1, M. von Hartrott2, A. Novak1 and D. Quitmann1

1  Institut für Atom - und Festkörperphysik, Freie Universität Berlin, 1000 Berlin 33, F.R.G.
2  Guest of Sfb 161


Abstract
The nuclear spin relaxation rate was measured in liquid GacTe1-c alloys on As as an impurity atom. A TDPAD technique was used on the 6 μs 73mAs isomer. The range l≥c≥0.2 was studied, with T=1110 K for c≤0.7. The quadrupolar part of the rate , RQ, was extracted. It shows essentially the same concentration dependence as existing data for RQ of Ga in liquid Gac Tel-c, and correlates strongly with the dip in conductivity near c=0.4. A quantitative analysis of the concentration dependence is attempted using a simple microscopic model. It comprises localization of conduction electrons including one free parameter for charge shift in the Ga-Te bond (ionicity). Satisfactory agreement is obtained.