Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-1043 - C4-1046
DOI https://doi.org/10.1051/jphyscol:19814228
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-1043-C4-1046

DOI: 10.1051/jphyscol:19814228

STRUCTURAL MODELLING OF THE LIQUID STATE OF TETRAHEDRALLY BONDED SEMICONDUCTORS

M. Popescu

Institute of Physics and Technology of Materials, Bucharest, Mågurele, P.O. Box MG-7, Romania.


Abstract
The atomic-scale structure of liquid germanium and silicon was modelled. A model with structured first atomic coordination was proposed. The first shell consists of two subshells : the inner one - a distorted tetrahedral configuration, the outer one - a random configuration of 1-5 atoms. An excellent fit to the experimental diffraction data was obtained when weak bond bending forces in the tetrahedral subshell were considered.