| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-807 - C4-810 | |
| DOI | https://doi.org/10.1051/jphyscol:19814177 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-807-C4-810
DOI: 10.1051/jphyscol:19814177
Department of Electrical Engineering, Hiroshima University, Hiroshima 730, Japan
J. Phys. Colloques 42 (1981) C4-807-C4-810
DOI: 10.1051/jphyscol:19814177
PLASMA DIAGNOSTIC DURING THE GROWTH OF a-Si : H
T. Hamasaki, M. Hirose and Y. OsakaDepartment of Electrical Engineering, Hiroshima University, Hiroshima 730, Japan
Abstract
The optical emission intensities of the reactive species, Si (288 nm), SiH (414 nm), and H (434, 486, 656 nm) in the silane plasma were measured as functions of gas flow rate and total pressure. The relative concentrations of Si, SiH, and H radicals have been correlated with the growth rate, hydrogen bonding, and its content for the resulting films. The diffusional mass transport of the neutral radicals, in particular, the emissive SiH and H, is suggested to be responsible for the deposition process of a-Si : H.