Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-799 - C4-801
DOI https://doi.org/10.1051/jphyscol:19814175
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-799-C4-801

DOI: 10.1051/jphyscol:19814175

INTERACTION BETWEEN ARGON AND DOPANTS IN SPUTTERED a-Si : H

M. Toulemonde1, J.J. Grob1, J.C. Bruyère2, A. Deneuville2, H. Hamdi2 and P. Siffert1

1  Centre de Recherches Nucléaires, Groupe de Physique et Applications des Semiconducteurs (PHASE), 67037 Strasbourg Cedex, France
2  Groupe des Transitions de Phases, C.N.R.S., 38042 Grenoble Cedex, France


Abstract
The concentrations of As, B, H, Ar and Si in sputtered a-Si : H are measured by helium Rutherford backscattering and nuclear reactions analysis. Excess or deficit of hydrogen and argon by comparison with intrinsic a-Si : H are found in presence of dopants at high deposition rate. This is related to the plasma deposition method and would suggest micro grain structure in the deposited layer.