Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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Page(s) | C4-799 - C4-801 | |
DOI | https://doi.org/10.1051/jphyscol:19814175 |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-799-C4-801
DOI: 10.1051/jphyscol:19814175
1 Centre de Recherches Nucléaires, Groupe de Physique et Applications des Semiconducteurs (PHASE), 67037 Strasbourg Cedex, France
2 Groupe des Transitions de Phases, C.N.R.S., 38042 Grenoble Cedex, France
J. Phys. Colloques 42 (1981) C4-799-C4-801
DOI: 10.1051/jphyscol:19814175
INTERACTION BETWEEN ARGON AND DOPANTS IN SPUTTERED a-Si : H
M. Toulemonde1, J.J. Grob1, J.C. Bruyère2, A. Deneuville2, H. Hamdi2 and P. Siffert11 Centre de Recherches Nucléaires, Groupe de Physique et Applications des Semiconducteurs (PHASE), 67037 Strasbourg Cedex, France
2 Groupe des Transitions de Phases, C.N.R.S., 38042 Grenoble Cedex, France
Abstract
The concentrations of As, B, H, Ar and Si in sputtered a-Si : H are measured by helium Rutherford backscattering and nuclear reactions analysis. Excess or deficit of hydrogen and argon by comparison with intrinsic a-Si : H are found in presence of dopants at high deposition rate. This is related to the plasma deposition method and would suggest micro grain structure in the deposited layer.