Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-787 - C4-790
DOI https://doi.org/10.1051/jphyscol:19814172
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-787-C4-790

DOI: 10.1051/jphyscol:19814172

CHEMICAL SITES OF RARE GAS ATOMS IN AMORPHOUS SILICON

Y. Katayama, T. Shimada, K. Usami and E. Maruyama

Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan


Abstract
The chemical sites of the neon atoms imbedded in hydrogenated amorphous silicon a-Si : H that is produced using Ne as a sputtering agent are examined using X-ray photoelectron spectroscopy (XPS). From the behaviour of the XPS spectra in the Ne KLL Auger energy region, it is revealed that the Ne atoms incorporated in a-Si : H are imbedded in three kinds of sites, i. e., in sites closely surrounded by Si atoms, in sites adjacent to incorporated hydrogen atoms, and in microvoids.