| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-715 - C4-724 | |
| DOI | https://doi.org/10.1051/jphyscol:19814157 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-715-C4-724
DOI: 10.1051/jphyscol:19814157
I.B.M. Thomas J. Watson Research Center, Yorktown Heights, New York 10598, U.S.A.
J. Phys. Colloques 42 (1981) C4-715-C4-724
DOI: 10.1051/jphyscol:19814157
NMR INVESTIGATIONS OF HYDROGENATED AMORPHOUS SILICON
J.A. ReimerI.B.M. Thomas J. Watson Research Center, Yorktown Heights, New York 10598, U.S.A.
Abstract
A review is presented of the N.M.R. (Nuclear Magnetic Resonance) studies to date of hydrogenated amorphous silicon-hydrogen films. Structural features of proton N.M.R. lineshapes, dynamics of hydrogen containing defect sites, and the promise of quantitative determinations of local silicon-hydrogen bonding environments are discussed in detail. Finally, some comments are given on future directions for N.M.R. studies of hydrogenated thin films.