J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|Page(s)||C4-687 - C4-690|
J. Phys. Colloques 42 (1981) C4-687-C4-690
A SIMPLIFIED MODEL FOR THE DEPOSITION KINETICS OF GD a-Si : H FILMSA. Matsuda, M. Matsumura, K. Nakagawa, S. Yamasaki and K. Tanaka
Electrotechnical Laboratory, 1-1-4 Umezono, Sakura-mura, Niihari-gun, Ibaragi 305, Japan
We propose a simplified model for the deposition kinetics of GD a-Si : H as well as a-Si : F : H films taking into account a dissociation energy of a chemical bond of diatomic molecules. The model explains successfully (1) the reason why no film is deposited from the pure SiF4 glow discharge and (2) a strong correlation between an emission intensity ratio of [H]/[SiH] in a plasma and an ir absorption ratio of dihydride to monohydride modes of a deposited film.