Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-675 - C4-678
DOI https://doi.org/10.1051/jphyscol:19814149
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-675-C4-678

DOI: 10.1051/jphyscol:19814149

RF POWER AND TEMPERATURE DEPENDENCES IN GD a-Si PRODUCED FROM HEATED SiH4

S. Hasegawa, Y. Kurata, Y. Imai and S. Narikawa

Department of Electronics, Kanazawa University, Kanazawa 920, Japan


Abstract
The relationships between electrical properties, ESR, IR and optical absorption are investigated for rf glow discharge Si films produced from SiH4/H2 gas heated together with a substrate which is set in the plasma gas. High dark conductive and photoconductive films are obtained under rf power of around 5W and gas temperature of 300°C. This sample is found to be polycrystalline from RHEED. Under high rf power and high gas temperature (around 600°C), a growth of a-Si films with less hydrogen and defect density is suggested.