J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|Page(s)||C4-587 - C4-590|
J. Phys. Colloques 42 (1981) C4-587-C4-590
RECOMBINATION PROCESSES AND GAP STATES IN HYDROGENATED AMORPHOUS SILICON AS ELUCIDATED BY TIME-RESOLVED LUMINESCENCE MEASUREMENTSI. Hirabayashi1, K. Morigaki1 and S. Nitta2
1 Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo 106, Japan
2 Faculty of Engineering, Gifu University, Kakamihara, Gifu 504, Japan
Time-resolved luminescence experiments have been carried out in a-Si : H. The results are interpreted on the basis of a model calculation in which radiative recombination of trapped electron-hole pairs is taken into account as well as nonradiative recombination at dangling bond centres.