Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-587 - C4-590
DOI https://doi.org/10.1051/jphyscol:19814128
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-587-C4-590

DOI: 10.1051/jphyscol:19814128

RECOMBINATION PROCESSES AND GAP STATES IN HYDROGENATED AMORPHOUS SILICON AS ELUCIDATED BY TIME-RESOLVED LUMINESCENCE MEASUREMENTS

I. Hirabayashi1, K. Morigaki1 and S. Nitta2

1  Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo 106, Japan
2  Faculty of Engineering, Gifu University, Kakamihara, Gifu 504, Japan


Abstract
Time-resolved luminescence experiments have been carried out in a-Si : H. The results are interpreted on the basis of a model calculation in which radiative recombination of trapped electron-hole pairs is taken into account as well as nonradiative recombination at dangling bond centres.