| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-587 - C4-590 | |
| DOI | https://doi.org/10.1051/jphyscol:19814128 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-587-C4-590
DOI: 10.1051/jphyscol:19814128
1 Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo 106, Japan
2 Faculty of Engineering, Gifu University, Kakamihara, Gifu 504, Japan
J. Phys. Colloques 42 (1981) C4-587-C4-590
DOI: 10.1051/jphyscol:19814128
RECOMBINATION PROCESSES AND GAP STATES IN HYDROGENATED AMORPHOUS SILICON AS ELUCIDATED BY TIME-RESOLVED LUMINESCENCE MEASUREMENTS
I. Hirabayashi1, K. Morigaki1 and S. Nitta21 Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo 106, Japan
2 Faculty of Engineering, Gifu University, Kakamihara, Gifu 504, Japan
Abstract
Time-resolved luminescence experiments have been carried out in a-Si : H. The results are interpreted on the basis of a model calculation in which radiative recombination of trapped electron-hole pairs is taken into account as well as nonradiative recombination at dangling bond centres.