| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-555 - C4-557 | |
| DOI | https://doi.org/10.1051/jphyscol:19814120 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-555-C4-557
DOI: 10.1051/jphyscol:19814120
Department of Physics and Division of Engineering, Brown University, Providence, Rhode Island 02912, U.S.A.
J. Phys. Colloques 42 (1981) C4-555-C4-557
DOI: 10.1051/jphyscol:19814120
TIME RESOLVED SPECTROSCOPY OF THE PHOTOINDUCED ABSORPTION IN GLOW-DISCHARGE a-Si:H
S. Ray, Z. Vardeny and J. TaucDepartment of Physics and Division of Engineering, Brown University, Providence, Rhode Island 02912, U.S.A.
Abstract
The time and temperature dependence of the photoinduced absorption spectra was measured in glow-discharge a-Si : H in the energy range 0.7 to 1.4 eV, temperature interval 10 to 306K and time domain 2 µs to 2 ms. The results are consistent with a model based on thermalization of excess carriers in trap states.