| Numéro |
J. Phys. Colloques
Volume 41, Numéro C4, Mai 1980
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
|
|
|---|---|---|
| Page(s) | C4-79 - C4-84 | |
| DOI | https://doi.org/10.1051/jphyscol:1980413 | |
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
J. Phys. Colloques 41 (1980) C4-79-C4-84
DOI: 10.1051/jphyscol:1980413
Plessey Research (Caswell) Limited, Allen Clark Research Centre, Caswell, Towcester, Northants., England
J. Phys. Colloques 41 (1980) C4-79-C4-84
DOI: 10.1051/jphyscol:1980413
CHANGES IN SURFACE TOPOGRAPHY AFTER PULSED LASER ANNEAL OF SILICON
C. Hill et D.J. GodfreyPlessey Research (Caswell) Limited, Allen Clark Research Centre, Caswell, Towcester, Northants., England
Abstract
Observations of deviations from planarity in surfaces and junctions after pulsed laser anneal are described and models presented for their generation. It is shown that topographic changes on bare silicon surfaces are associated mainly with energy variations in the irradiation pulse, whereas on oxide coated surfaces topographic effects can arise purely from the difference in thermal and mechanical properties of the oxide and underlying silicon.