| Numéro |
J. Phys. Colloques
Volume 41, Numéro C4, Mai 1980
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
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|---|---|---|
| Page(s) | C4-41 - C4-45 | |
| DOI | https://doi.org/10.1051/jphyscol:1980407 | |
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
J. Phys. Colloques 41 (1980) C4-41-C4-45
DOI: 10.1051/jphyscol:1980407
Centre de Recherches Nucléaires, Groupe de Physique et Applications des Semiconducteurs, 67037 Strasbourg-Cedex, France
J. Phys. Colloques 41 (1980) C4-41-C4-45
DOI: 10.1051/jphyscol:1980407
SOLUBILITY LIMIT OF DOPANTS IN SILICON IRRADIATED BY RUBY LASER
Fogarassy E., Stuck R., Grob J.J., Grob A. et Siffert P.Centre de Recherches Nucléaires, Groupe de Physique et Applications des Semiconducteurs, 67037 Strasbourg-Cedex, France
Abstract
The solubility of several dopants (Sb, Ga, Bi, In) in laser treated silicon has been investigated. The dopants were introduced by vacuum deposition followed by a ruby laser irradiation. Their solubility was determined by Rutherford backscattering spectrometry measurements in channeling and random conditions. In all cases a solubility limit Cml higher than the equilibrium solubility was found and a simple correlation with the equilibrium distribution coefficient kO could be established : Cml = 8.6 × 1021 k0.51O cm-3†