| Numéro |
J. Phys. Colloques
Volume 41, Numéro C4, Mai 1980
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
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|---|---|---|
| Page(s) | C4-1 - C4-5 | |
| DOI | https://doi.org/10.1051/jphyscol:1980401 | |
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
J. Phys. Colloques 41 (1980) C4-1-C4-5
DOI: 10.1051/jphyscol:1980401
Bell Laboratories, Murray Hill, New Jersey 07974, U.S.A.
J. Phys. Colloques 41 (1980) C4-1-C4-5
DOI: 10.1051/jphyscol:1980401
MECHANISMS OF LASER INDUCED CRYSTALLIZATION OF SEMICONDUCTORS
J. M. PoateBell Laboratories, Murray Hill, New Jersey 07974, U.S.A.
Abstract
The mechanisms of laser annealing of semiconductors are reviewed. Two distinct regrowth regimes have been established. I. Liquid phase where epitaxial regrowth occurs from the liquid-solid interface. In this regime the regrown layer is free of extended defects, dopant depth profiles are consistent with liquid diffusion and equilibrium solid solubilities can be exceeded. Uniform metal silicide layers can be produced from the liquid phase. II. Solid phase where epitaxial regrowth occurs from the amorphous-crystalline interface. No dopant redistribution is observed.