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Le Journal de Physique Colloques

Volume 36 / Numéro C3 (Septembre 1975)

EXPOSÉS et COMMUNICATIONS présentés à la Seconde Conférence Internationale sur les Composés Semiconducteurs Ternaires / Second International Conference on Ternary Semiconducting Compounds

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GLANCES AT TERNARY COMPOUNDS p. C3-1

M. BERNARD

DOI: https://doi.org/10.1051/jphyscol:1975301

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CRYSTAL CHEMISTRY, GROWTH AND PROPERTIES OF MULTI-CATION CHALCOGENIDES p. C3-9

R. NITSCHE

DOI: https://doi.org/10.1051/jphyscol:1975302

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COMPRESSION TÉTRAGONALE ET BIRÉFRINGENCE DES COMPOSÉS A^IIB^IVC^V₂ p. C3-17

D. S. CHEMLA, A. DESCHANVRES et B. MERCEY

DOI: https://doi.org/10.1051/jphyscol:1975303

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ÉTUDE DE DÉFAUTS DANS QUELQUES STRUCTURES CHALCOPYRITES p. C3-25

Y. MONTFORT, J. VIZOT et G. ALLAIS

DOI: https://doi.org/10.1051/jphyscol:1975304

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THE STRUCTURE OF CHALCOPYRITE SEMICONDUCTORS p. C3-27

D. WEAIRE et J. NOOLANDI

DOI: https://doi.org/10.1051/jphyscol:1975305

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HIGH TEMPERATURE LATTICE PARAMETERS OF ZnSiP₂, ZnGeP₂ AND CdGeP₂ p. C3-31

A. MILLER, R. G. HUMPHREYS et B. CHAPMAN

DOI: https://doi.org/10.1051/jphyscol:1975306

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GROWTH OF II IV V₂ COMPOUNDS AND ALLOYS BY ACCELERATED CRUCIBLE ROTATION TECHNIQUES p. C3-35

B. R. PAMPLIN

DOI: https://doi.org/10.1051/jphyscol:1975307

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ELECTRON-SPIN-RESONANCE AND OPTICAL ABSORPTION OF Ni⁺ AND Ti³⁺ IN I_B-III-S₂ COMPOUNDS p. C3-37

U. KAUFMANN, A. RÄUBER et J. SCHNEIDER

DOI: https://doi.org/10.1051/jphyscol:1975308

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FLUX GROWTH, ANALYSIS AND CRYSTALLOGRAPHIC ASPECTS OF ALKALI RARE EARTH SULFIDES p. C3-39

A. W. VERHEIJEN, W. J. P. VAN ENCKEVORT, J. BLOEM et L. J. GILING

DOI: https://doi.org/10.1051/jphyscol:1975309

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TRANSITION METAL IONS AS STOICHIOMETRY SENSORS OF CuGaS₂ p. C3-47

H. J. VON BARDELEBEN, A. GOLTZENE et C. SCHWAB

DOI: https://doi.org/10.1051/jphyscol:1975310

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NON-STOICHIOMETRY AND SOLID SOLUTION IN ADAMANTINE TERNARY COMPOUNDS p. C3-53

B. R. PAMPLIN

DOI: https://doi.org/10.1051/jphyscol:1975311

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THE GROWTH OF TERNARY SEMICONDUCTOR CRYSTALS SUITABLE FOR DEVICE APPLICATIONS p. C3-57

R. S. FEIGELSON

DOI: https://doi.org/10.1051/jphyscol:1975312

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DIRECT AND WAVELENGTH MODULATED PHOTOCONDUCTIVITY AND PHOTOVOLTAÏC EXCITATION SPECTRA OF CuGaS₂ p. C3-67

P. ROCHON, E. FORTIN, J. P. ZIELINGER et C. SCHWAB

DOI: https://doi.org/10.1051/jphyscol:1975313

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ELECTRICAL PROPERTIES OF ZnGeP₂ AND CdGeP₂ p. C3-73

A. MILLER et W. CLARK

DOI: https://doi.org/10.1051/jphyscol:1975314

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TRANSPORT PROPERTIES OF CdIn₂S₄ AND CdIn_2(1-x) Cr_2xS₄ SINGLE CRYSTALS p. C3-77

S. ENDO et T. IRIE

DOI: https://doi.org/10.1051/jphyscol:1975315

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SEMICONDUCTORS OF THE TYPE Me^IIMe^IVS₃ p. C3-82

U. V. ALPEN, E. GMELIN et A. RABENAU

DOI: https://doi.org/10.1051/jphyscol:1975316

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PRÉPARATION ET PROPRIÉTÉS DE MONOCRISTAUX DE COMPOSÉS DE TYPE A₄BX₆ (A = Cd, Hg ; B = Ge, Si ; X = S, Se) p. C3-83

P. QUENEZ, A. MAURER et O. GOROCHOV

DOI: https://doi.org/10.1051/jphyscol:1975317

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DEVICE APPLICATIONS OF THE TERNARY SEMICONDUCTING COMPOUNDS p. C3-89

R. C. SMITH

DOI: https://doi.org/10.1051/jphyscol:1975318

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THE p-CuInSe₂/n-CdS HETERODIODE : PHOTOVOLTAIC DETECTOR, SOLAR CELL AND LIGHT EMITTING DIODE p. C3-101

S. WAGNER, J. L. SHAY et H. M. KASPER

DOI: https://doi.org/10.1051/jphyscol:1975319

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BRIDGMAN GROWTH OF AgGaS₂ WITH IMPROVED OPTICAL PROPERTIES p. C3-105

H. MATTHES, R. VIEHMANN, N. MARSCHALL et P. KORCZAK

DOI: https://doi.org/10.1051/jphyscol:1975320

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EXPERIMENTAL STUDIES OF ENERGY BAND STRUCTURE OF CHALCOPYRITE CRYSTALS p. C3-109

J. L. SHAY

DOI: https://doi.org/10.1051/jphyscol:1975321

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OPTICAL SPECTRA OF THE A²B²C⁵₂TYPE SEMICONDUCTORS p. C3-115

G. AMBRAZEVICHIUS, G. BABONAS, J. KAVALIAUSKAS, G. KRIVAITE et A. SHILEIKA

DOI: https://doi.org/10.1051/jphyscol:1975322

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ELECTROREFLECTANCE AND BAND STRUCTURE OF ZnSiAs_2-xP_x ALLOYS p. C3-123

J. GALLAY, A. DESCHANVRES, S. GAILLARD et C. ALIBERT

DOI: https://doi.org/10.1051/jphyscol:1975323

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ANION SHIFT INFLUENCE ON BAND STRUCTURE OF CRYSTALS WITH CHALCOPYRITE LATTICE p. C3-129

Ju. I. POLYGALOV, A. S. POPLAVNOI et A. M. RATNER

DOI: https://doi.org/10.1051/jphyscol:1975324

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VARIATION AVEC LA TEMPÉRATURE DE LA BANDE INTERDITE DU CHAMP CRISTALLIN ET DU COUPLAGE SPIN-ORBITE EN CENTRE DE ZONE DE AgGaSe₂ ET AgGaTe₂ p. C3-137

B. SERMAGE, F. BARTHE-LEFIN et A. C. PAPADOPOULO-SCHERLE

DOI: https://doi.org/10.1051/jphyscol:1975325

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ELECTRONIC STRUCTURE OF Fe ION IN CuGaS₂ p. C3-145

K. I. GONDAIRA, T. KAMBARA et K. SUZUKI

DOI: https://doi.org/10.1051/jphyscol:1975326

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OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES OF CHALCOPYRITE, CuFeS₂ p. C3-149

T. TERANISHI et K. SATO

DOI: https://doi.org/10.1051/jphyscol:1975327

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PREPARATION OF CuAl_1-xGa_xS₂ ALLOYS AND MEASUREMENT OF PHASE-SHIFT DIFFERENCE UPON REFLECTION p. C3-155

N. YAMAMOTO et T. MIYAUCHI

DOI: https://doi.org/10.1051/jphyscol:1975328

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OPTICAL ABSORPTION IN ZnSiP₂ p. C3-159

R. G. HUMPHREYS et B. R. PAMPLIN

DOI: https://doi.org/10.1051/jphyscol:1975329

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OPTICAL PROPERTIES OF CdIn₂S₄ SINGLE CRYSTALS p. C3-163

H. NAKANISHI, S. ENDO et T. IRIE

DOI: https://doi.org/10.1051/jphyscol:1975330

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LATTICE DYNAMICS OF A^IIB^IVC^V₂ AND A^IB^IIIC^VI₂ SEMICONDUCTORS WITH CHALCOPYRITE LATTICE IN A RIGID-ION MODEL p. C3-169

A. S. POPLAVNOI et V. G. TJUTEREV

DOI: https://doi.org/10.1051/jphyscol:1975331

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OPTICAL PHONONS IN I-III-VI₂ COMPOUNDS p. C3-177

W. H. KOSCHEL, F. SORGER et J. BAARS

DOI: https://doi.org/10.1051/jphyscol:1975332

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RAMAN SPECTRUM OF AgGaS₂ p. C3-183

D. J. LOCKWOOD et H. MONTGOMERY

DOI: https://doi.org/10.1051/jphyscol:1975333

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BRILLOUIN SCATTERING DETERMINATION OF THE ELASTIC MODULI OF AgGaS₂ AND THEIR INFLUENCE ON THE ANALYSIS OF THE OPTICAL PHONON DATA p. C3-185

G. D. HOLAH et M. GRIMSDITCH

DOI: https://doi.org/10.1051/jphyscol:1975334

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CONCLUDING REMARKS p. C3-189

M. CARDONA et J. JERPHAGNON

DOI: https://doi.org/10.1051/jphyscol:1975335

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Le Journal de Physique Colloques

Volume 36 / Numéro C3 (Septembre 1975)

EXPOSÉS et COMMUNICATIONS présentés à la Seconde Conférence Internationale sur les Composés Semiconducteurs Ternaires / Second International Conference on Ternary Semiconducting Compounds

GLANCES AT TERNARY COMPOUNDS p. C3-1

CRYSTAL CHEMISTRY, GROWTH AND PROPERTIES OF MULTI-CATION CHALCOGENIDES p. C3-9

COMPRESSION TÉTRAGONALE ET BIRÉFRINGENCE DES COMPOSÉS AIIBIVCV2 p. C3-17

ÉTUDE DE DÉFAUTS DANS QUELQUES STRUCTURES CHALCOPYRITES p. C3-25

THE STRUCTURE OF CHALCOPYRITE SEMICONDUCTORS p. C3-27

HIGH TEMPERATURE LATTICE PARAMETERS OF ZnSiP2, ZnGeP2 AND CdGeP2 p. C3-31

GROWTH OF II IV V2 COMPOUNDS AND ALLOYS BY ACCELERATED CRUCIBLE ROTATION TECHNIQUES p. C3-35

ELECTRON-SPIN-RESONANCE AND OPTICAL ABSORPTION OF Ni+ AND Ti3+ IN IB-III-S2 COMPOUNDS p. C3-37

FLUX GROWTH, ANALYSIS AND CRYSTALLOGRAPHIC ASPECTS OF ALKALI RARE EARTH SULFIDES p. C3-39

TRANSITION METAL IONS AS STOICHIOMETRY SENSORS OF CuGaS2 p. C3-47

NON-STOICHIOMETRY AND SOLID SOLUTION IN ADAMANTINE TERNARY COMPOUNDS p. C3-53

THE GROWTH OF TERNARY SEMICONDUCTOR CRYSTALS SUITABLE FOR DEVICE APPLICATIONS p. C3-57

DIRECT AND WAVELENGTH MODULATED PHOTOCONDUCTIVITY AND PHOTOVOLTAÏC EXCITATION SPECTRA OF CuGaS2 p. C3-67

ELECTRICAL PROPERTIES OF ZnGeP2 AND CdGeP2 p. C3-73

TRANSPORT PROPERTIES OF CdIn2S4 AND CdIn2(1-x) Cr2xS4 SINGLE CRYSTALS p. C3-77

SEMICONDUCTORS OF THE TYPE MeIIMeIVS3 p. C3-82

PRÉPARATION ET PROPRIÉTÉS DE MONOCRISTAUX DE COMPOSÉS DE TYPE A4BX6 (A = Cd, Hg ; B = Ge, Si ; X = S, Se) p. C3-83

DEVICE APPLICATIONS OF THE TERNARY SEMICONDUCTING COMPOUNDS p. C3-89

THE p-CuInSe2/n-CdS HETERODIODE : PHOTOVOLTAIC DETECTOR, SOLAR CELL AND LIGHT EMITTING DIODE p. C3-101

BRIDGMAN GROWTH OF AgGaS2 WITH IMPROVED OPTICAL PROPERTIES p. C3-105

EXPERIMENTAL STUDIES OF ENERGY BAND STRUCTURE OF CHALCOPYRITE CRYSTALS p. C3-109

OPTICAL SPECTRA OF THE A2B2C52TYPE SEMICONDUCTORS p. C3-115

ELECTROREFLECTANCE AND BAND STRUCTURE OF ZnSiAs2-xPx ALLOYS p. C3-123