| Issue |
J. Phys. Colloques
Volume 50, Number C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-182 - C6-182 | |
| DOI | https://doi.org/10.1051/jphyscol:1989636 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-182-C6-182
DOI: 10.1051/jphyscol:1989636
Academy of Sciences of the GDR, Institute of Semiconductor Physics, Frankfurt, D.R.G.
International Workshop
J. Phys. Colloques 50 (1989) C6-182-C6-182
DOI: 10.1051/jphyscol:1989636
ON THE TWO-DIMENSIONAL DETERMINATION OF p-n JUNCTIONS WITH THE EBIC COLLECTION PROBABILITY
W. HOPPE et M. KITTLERAcademy of Sciences of the GDR, Institute of Semiconductor Physics, Frankfurt, D.R.G.
Abstract
Both the intrinsic defect structure in semiconducting materials and the technological steps during microcircuit manufacturing (e.g. implantation, rapid thermal processing) affect the diffusion process of dopants. Using the electron-beam-induced current (EBIC) technique it is possible to determine in an experimental way the site of the space charge region and of the electrical p-n junction, respectively.