| Issue |
J. Phys. Colloques
Volume 50, Number C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-174 - C6-174 | |
| DOI | https://doi.org/10.1051/jphyscol:1989628 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-174-C6-174
DOI: 10.1051/jphyscol:1989628
Laboratoire d'Automatique et de Microélectronique de Montpellier, CNRS UA-371, Université des Sciences et Techniques du Languedoc, Place Eugène Bataillon, F-34060 Montpellier Cedex, France
International Workshop
J. Phys. Colloques 50 (1989) C6-174-C6-174
DOI: 10.1051/jphyscol:1989628
DETERMINATION OF ELECTRON BEAM CHARGING CONDITIONS OF OXIDES AT LOW ENERGY IN THE LOW DOSE RANGE
M. VALENZA, P. GIRARD et B. PISTOULETLaboratoire d'Automatique et de Microélectronique de Montpellier, CNRS UA-371, Université des Sciences et Techniques du Languedoc, Place Eugène Bataillon, F-34060 Montpellier Cedex, France
Abstract
Scanning Electron Microscope (SEM) voltage contrast techniques proved to constitute a valuable tool for testing integrated circuits (IC). However, the active components may be damaged by electron beam irradiation, so that it is of great importance to determine accurately the allowable limits.