Issue
J. Phys. Colloques
Volume 49, Number C4, Septembre 1988
ESSDERC 88
18th European Solid State Device Research Conference
Page(s) C4-265 - C4-268
DOI https://doi.org/10.1051/jphyscol:1988455
ESSDERC 88
18th European Solid State Device Research Conference

J. Phys. Colloques 49 (1988) C4-265-C4-268

DOI: 10.1051/jphyscol:1988455

A MOBILITY MODEL FOR MOSFET DEVICE DIMULATION

A.J. WALKER et P.H. WOERLEE

Philips Research Laboratories, NL-5600 JA Eindhoven, The Netherlands


Abstract
The device characteristics of sub-micron MOS transistors depend strongly on the mobility of the charge carriers in the inversion layer. A new low lateral field mobility model for the normal field dependence will be presented. Good agreement was found between the predicted and measured mobilities for a large variety of samples. The model was successfully incorporated into a two - dimensional device simulation program which gave predictions agreeing well with experimental data.