| Issue |
J. Phys. Colloques
Volume 49, Number C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-821 - C4-824 | |
| DOI | https://doi.org/10.1051/jphyscol:19884173 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-821-C4-824
DOI: 10.1051/jphyscol:19884173
Faculty of Electrical Engineering, Delft University of Technology, PO Box 5031, NL-2600 GA Delft, The Netherlands
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-821-C4-824
DOI: 10.1051/jphyscol:19884173
SUBSTRATE AND DEFECT INFLUENCES ON THE POSITION-RESPONSE LINEARITY OF POSITION-SENSITIVE DETECTORS
Y.Z. XINGFaculty of Electrical Engineering, Delft University of Technology, PO Box 5031, NL-2600 GA Delft, The Netherlands
Abstract
The performance of position-sensitive detectors (PSD's) with an epilayer was investigated. Defects which are responsible for a great position-response nonlinearity in the p-type resistive layer were fond. The influence of the substrate potential, the photocurrent generation in the junction between the epilayer and the substrate, and the dependency of the resistive layer thickness on the local potential were analyzed. By connecting the substrate to the same potential as the p-type layer, distortions in the position-response grid are reduced to a certain degree. A simple method was used to discover this kind of defect in an early stage.