| Issue |
J. Phys. Colloques
Volume 49, Number C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-779 - C4-782 | |
| DOI | https://doi.org/10.1051/jphyscol:19884163 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-779-C4-782
DOI: 10.1051/jphyscol:19884163
1 SGS-Thomson Microelectronics, Via C. Olivetti 2, I-20041 Agrate Brianza (MI), Italy
2 Istituto di Fisica del Politecnico, p.zza Leonardo da Vinci 32, I-20133 Milano, Italy
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-779-C4-782
DOI: 10.1051/jphyscol:19884163
HOT CARRIER STRESS INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE
C. BERGONZONI1, R. BENECCHI2 et P. CAPRARA11 SGS-Thomson Microelectronics, Via C. Olivetti 2, I-20041 Agrate Brianza (MI), Italy
2 Istituto di Fisica del Politecnico, p.zza Leonardo da Vinci 32, I-20133 Milano, Italy
Abstract
An analysis of MOS transistor hot carrier degradation is presented, based upon experimental, simulated and analytical study. The transconductance curve study is shown to be a good tool for the correct characterization of the stress induced damage, and experimentally observed transconductance degradations are reproduced by simulations and by means of a simple analytic model. The usual classification of damage in terms of threshold voltage shift and maximum transconductance degradation is shown to fail under general conditions, where structural alterations of electrical characteristics take place.