| Issue |
J. Phys. Colloques
Volume 49, Number C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-771 - C4-774 | |
| DOI | https://doi.org/10.1051/jphyscol:19884161 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-771-C4-774
DOI: 10.1051/jphyscol:19884161
Institut für Werkstoffe der Elektrotechnik der Technischen Universität Berlin, Jebensstr. 1, D-1000 Berlin 12, F.R.G.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-771-C4-774
DOI: 10.1051/jphyscol:19884161
ANNEALING OF HOT-CARRIER-INDUCED MOSFET DEGRADATION
R. MAHNKOPF, G. PRZYREMBEL et H.G. WAGEMANNInstitut für Werkstoffe der Elektrotechnik der Technischen Universität Berlin, Jebensstr. 1, D-1000 Berlin 12, F.R.G.
Abstract
The annealing of fixed oxide charge and interface states generated by hot-carrier stress is investigated in the temperature range of 100°C - 450°C. First order rate equations are given, which approximately describe two subsequent processes involved in the annealing and ending at neutralization. The related activation energies are determined. For comparison the annealing of synchrotron light induced damage is examined.