Issue
J. Phys. Colloques
Volume 49, Number C4, Septembre 1988
ESSDERC 88
18th European Solid State Device Research Conference
Page(s) C4-701 - C4-704
DOI https://doi.org/10.1051/jphyscol:19884147
ESSDERC 88
18th European Solid State Device Research Conference

J. Phys. Colloques 49 (1988) C4-701-C4-704

DOI: 10.1051/jphyscol:19884147

A GaAs ON Si COPLANAR TECHNOLOGY BY EMBEDDED MOLECULAR BEAM EPITAXY

J.B. LIANG, J. DE BOECK, R. MERTENS et G. BORGHS

Interuniversity Micro-Electronics Center vzw, Kapeldreef 75, B-3030 Leuven, Belgium

Without abstract



First page of the article