Issue
J. Phys. Colloques
Volume 49, Number C4, Septembre 1988
ESSDERC 88
18th European Solid State Device Research Conference
Page(s) C4-557 - C4-560
DOI https://doi.org/10.1051/jphyscol:19884117
ESSDERC 88
18th European Solid State Device Research Conference

J. Phys. Colloques 49 (1988) C4-557-C4-560

DOI: 10.1051/jphyscol:19884117

SIMULATION OF SOURCE/DRAIN STRUCTURES FOR SUBMICRON MOSFETs WITH AND WITHOUT PREAMORPHIZATION

M. ORLOWSKI, C. MAZURÉ et L. MADER

Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.


Résumé
Un modèle autoconsistant est proposé pour la diffusion des impuretés et des défauts ponctuels décrivant avec succès la diffusion à haute concentration de phosphore et bore y compris le cas de préamorphisation. En particulier, les mécanismes générants des interstitiels et l'absorption d'interstitiels localisée dans la couche des boucles de dislocation - un résultat de la préamorphisation - sont pris en consideration d'une façon consistante.


Abstract
A selfconsistent model for the impurity and point defect diffusion is proposed and applied successfully to high concentration phosphorus and boron diffusion with and without preamorphized substrate. In particular the generation of the interstitials by high phosphorus and boron diffusion, the absorption of the interstitials at the damaged layer consisting of dislocation loops - a remnant of the preamorphization -, and the generation of the interstitials by the decay of the precipitated phase of the impurities above the solubility Limit is taken into account in a consistent way. The present model is an important tool for advanced optimization for submicron MOSFETs dealing with involved interstitial dynamics as in the presence of preamorphization effects.