| Issue |
J. Phys. Colloques
Volume 47, Number C8, Décembre 1986
EXAFS and Near Edge Structure IV
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|
|---|---|---|
| Page(s) | C8-63 - C8-66 | |
| DOI | https://doi.org/10.1051/jphyscol:1986809 | |
EXAFS and Near Edge Structure IV
J. Phys. Colloques 47 (1986) C8-63-C8-66
DOI: 10.1051/jphyscol:1986809
1 I.N.F.N., Laboratori Nazionali di Frascati, C.P. 13, I-00044 Frascati, Italy
2 Dipartimento di Fisica, Università "La Sapienza", I-00185 Roma, Italy
J. Phys. Colloques 47 (1986) C8-63-C8-66
DOI: 10.1051/jphyscol:1986809
SPHERICAL WAVE ANALYSIS AND MULTIPLE SCATTERING EFFECTS IN HYDROGENATED AMORPHOUS SILICON
A. BALERNA1, M. BENFATTO1, S. MOBILIO1, C.R. NATOLI1, A. FILIPPONI2 et F. EVANGELISTI21 I.N.F.N., Laboratori Nazionali di Frascati, C.P. 13, I-00044 Frascati, Italy
2 Dipartimento di Fisica, Università "La Sapienza", I-00185 Roma, Italy
Abstract
We have performed a spherical wave analysis of the EXAFS spectra of hydrogenated amorphous silicon in order to detect contributions due to the next nearest neighbor scattering and/or multiple scattering. A high frequency oscillation was found that could be interpreted in terms of a second-shell contribution without multiple scattering effects. A feature which could not be explained in the one-electron scheme was identified and tentatively attributed to a many-electron effect.