EXAFS and Near Edge Structure IV
J. Phys. Colloques 47 (1986) C8-71-C8-74
DOI: 10.1051/jphyscol:1986811
SPHERICAL WAVES EXAFS AND MULTIPLE SCATTERING EFFECTS IN XANES OF THE K-EDGE SPECTRUM OF SILICON
A. DI CICCO1, N.V. PAVEL2, A. BIANCONI1, M. BENFATTO3 et C.R. NATOLI31 Dipartimento di Fisica, Università "La Sapienza", I-00185 Roma, Italy
2 Dipartimento di Chimica, Università "La Sapienza", I-00185 Roma, Italy
3 Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Frascati, I-00044 Frascati, Italy
Abstract
A theoretical calculation of the K-edge spectrum of silicon was performed. A good fit with the experimental EXAFS spectrum has been obtained by using the spherical wave formalism, the actual values of the mean free path and the Debye-Waller terms. The relevant multiple scattering contribution in the first 70 eV of the spectrum has been obtained by subtraction of a simulated EXAFS spectrum from the experimental one.