| Issue |
J. Phys. Colloques
Volume 47, Number C2, Mars 1986
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
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| Page(s) | C2-315 - C2-319 | |
| DOI | https://doi.org/10.1051/jphyscol:1986248 | |
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
J. Phys. Colloques 47 (1986) C2-315-C2-319
DOI: 10.1051/jphyscol:1986248
1 Physics Department, The Pennsylvania State University, University Park, PA 16802, U.S.A.
2 Visiting scholar from Dalian Marine College, Dalian, China
J. Phys. Colloques 47 (1986) C2-315-C2-319
DOI: 10.1051/jphyscol:1986248
GROWTH OF THIN SINGLE CRYSTAL NiSi2 FILMS OF Si SURFACES, A FIELD ION MICROSCOPE STUDY
H.F. LIU1, H.M. LIU2 et T.T. TSONG11 Physics Department, The Pennsylvania State University, University Park, PA 16802, U.S.A.
2 Visiting scholar from Dalian Marine College, Dalian, China
Abstract
Thin single crystal NiSi2 films have been grown epitaxially on the [111] oriented Si tip surface in UHV. A 180° change in the axial symmetry is found for the field ion images taken before and after the growth of the silicide layers. From this observation and a computer simulation of the field ion images of A- and B-type interfaces we conclude that the Si-Nisi2 interface formed has the B-type structure.