Numéro
J. Phys. Colloques
Volume 47, Numéro C2, Mars 1986
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
Page(s) C2-315 - C2-319
DOI https://doi.org/10.1051/jphyscol:1986248
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ

J. Phys. Colloques 47 (1986) C2-315-C2-319

DOI: 10.1051/jphyscol:1986248

GROWTH OF THIN SINGLE CRYSTAL NiSi2 FILMS OF Si SURFACES, A FIELD ION MICROSCOPE STUDY

H.F. LIU1, H.M. LIU2 et T.T. TSONG1

1  Physics Department, The Pennsylvania State University, University Park, PA 16802, U.S.A.
2  Visiting scholar from Dalian Marine College, Dalian, China


Abstract
Thin single crystal NiSi2 films have been grown epitaxially on the [111] oriented Si tip surface in UHV. A 180° change in the axial symmetry is found for the field ion images taken before and after the growth of the silicide layers. From this observation and a computer simulation of the field ion images of A- and B-type interfaces we conclude that the Si-Nisi2 interface formed has the B-type structure.