| Issue |
J. Phys. Colloques
Volume 47, Number C2, Mars 1986
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
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| Page(s) | C2-309 - C2-314 | |
| DOI | https://doi.org/10.1051/jphyscol:1986247 | |
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
J. Phys. Colloques 47 (1986) C2-309-C2-314
DOI: 10.1051/jphyscol:1986247
Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, GB-Oxford 0X1 3PH. Great Britain
J. Phys. Colloques 47 (1986) C2-309-C2-314
DOI: 10.1051/jphyscol:1986247
PULSED LASER ATOM PROBE ANALYSIS OF III-V COMPOUND SEMICONDUCTORS
A. CEREZO, C.R.M. GROVENOR et G.D.W. SMITHDepartment of Metallurgy and Science of Materials, University of Oxford, Parks Road, GB-Oxford 0X1 3PH. Great Britain
Abstract
The pulsed laser atom probe has been shown to give stoichiometrically correct analyses of GaAs and InAs. Temperature rises under pulsed laser irradiation are investigated and the generation of As cluster ions is found to be primarily due to field evaporation at elevated temperatures. Preliminary results on the analysis of ternary materials is presented, showing local composition variations in a GaAlAs layer.