| Numéro |
J. Phys. Colloques
Volume 49, Numéro C6, Novembre 1988
35th International Field Emission Symposium / 35éme Symposium International d'Emission de Champ
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| Page(s) | C6-509 - C6-514 | |
| DOI | https://doi.org/10.1051/jphyscol:1988686 | |
35th International Field Emission Symposium / 35éme Symposium International d'Emission de Champ
J. Phys. Colloques 49 (1988) C6-509-C6-514
DOI: 10.1051/jphyscol:1988686
Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, GB-Oxford OX1 3PH, Great-Britain
J. Phys. Colloques 49 (1988) C6-509-C6-514
DOI: 10.1051/jphyscol:1988686
PULSED LASER ATOM PROBE ANALYSIS OF TERNARY AND QUATERNARY III-V EPITAXIAL LAYERS
J.A. LIDDLE, A. NORMAN, A. CEREZO et C.R.M. GROVENORDepartment of Metallurgy and Science of Materials, University of Oxford, Parks Road, GB-Oxford OX1 3PH, Great-Britain
Abstract
Over the past few years interest has increased in optical communications systems. These require new materials - in particular ternary and quaternary III-V alloys - to produce the necessary devices. Pulsed laser atom probe (PLAP) has been shown to be capable of providing accurate analyses of bulk III-V alloys and, with its extremely high resolution, is ideal for studying the microchemistry of interfaces in quantum wells and the fine scale decomposition processes that occur in III-V alloys. The key to successful analysis of epitaxial layers lies in specimen preparation. Methods for preparing samples lying in the plane of the layer and perpendicular to it are discussed. Some of the first results of these analyses are also presented.