| Issue |
J. Phys. Colloques
Volume 42, Number C7, Octobre 1981
Third International Conference on Hot Carriers in Semiconductors
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|---|---|---|
| Page(s) | C7-431 - C7-436 | |
| DOI | https://doi.org/10.1051/jphyscol:1981753 | |
Third International Conference on Hot Carriers in Semiconductors
J. Phys. Colloques 42 (1981) C7-431-C7-436
DOI: 10.1051/jphyscol:1981753
Institut für Theoretische Physik, Universität Graz, A-8010 Graz, Austria
J. Phys. Colloques 42 (1981) C7-431-C7-436
DOI: 10.1051/jphyscol:1981753
THEORY OF ONE- AND TWO-PHONON DEFORMATION POTENTIALS IN SEMICONDUCTORS
P. Kocevar, K. Baumann, P. Vogl et W. PötzInstitut für Theoretische Physik, Universität Graz, A-8010 Graz, Austria
Abstract
A theory of deformation potentials for charge carriers in tetrahedral semiconductors is presented. The model is based on an LCAO-formulation and is able to predict optical one-phonon deformation potentials for 36 materials and intravalley two-phonon deformation potentials in Ge,Si and III-V compounds. The comparison with the known experimental deformation potentials shows very good agreement between theory and experiment.