J. Phys. Colloques
Volume 42, Numéro C7, Octobre 1981Third International Conference on Hot Carriers in Semiconductors
|Page(s)||C7-431 - C7-436|
J. Phys. Colloques 42 (1981) C7-431-C7-436
THEORY OF ONE- AND TWO-PHONON DEFORMATION POTENTIALS IN SEMICONDUCTORSP. Kocevar, K. Baumann, P. Vogl et W. Pötz
Institut für Theoretische Physik, Universität Graz, A-8010 Graz, Austria
A theory of deformation potentials for charge carriers in tetrahedral semiconductors is presented. The model is based on an LCAO-formulation and is able to predict optical one-phonon deformation potentials for 36 materials and intravalley two-phonon deformation potentials in Ge,Si and III-V compounds. The comparison with the known experimental deformation potentials shows very good agreement between theory and experiment.