| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-277 - C4-280 | |
| DOI | https://doi.org/10.1051/jphyscol:1981459 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-277-C4-280
DOI: 10.1051/jphyscol:1981459
Dept. of E.E., Osaka Univ., Suita, Osaka 565, Japan
J. Phys. Colloques 42 (1981) C4-277-C4-280
DOI: 10.1051/jphyscol:1981459
Si-H VIBRATIONAL PROPERTIES IN CRYSTALLIZED HYDROGENATED SILICON FABRICATED BY REACTIVE SPUTTERING IN H2 ATMOSPHERE
A. Hiraki, T. Imura, K. Mogi and M. TashiroDept. of E.E., Osaka Univ., Suita, Osaka 565, Japan
Abstract
Crystallized hydrogenated silicon (c-Si:H) films are fabricated by rf-sputtering in pure H2 atmosphere. Their sharp and fine structured infrared spectra have enabled us to assign accurately the vibrational configurations between Si and H. The results are applicable to the amorphous hydrogenated silicon (a-Si : H) where the Si-H vibrational configurations are not yet well understood.