| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-283 - C4-291 | |
| DOI | https://doi.org/10.1051/jphyscol:1981460 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-283-C4-291
DOI: 10.1051/jphyscol:1981460
Xerox Palo Alto Research Center, Palo Alto, California 94304, U.S.A.
J. Phys. Colloques 42 (1981) C4-283-C4-291
DOI: 10.1051/jphyscol:1981460
LUMINESCENCE IN a-Si:H
R.A. StreetXerox Palo Alto Research Center, Palo Alto, California 94304, U.S.A.
Abstract
Dangling bonds, as observed in ESR, act as both radiative and non-radiative recombination centers in a-Si:H. The luminescence properties of a-Si:H are therefore very sensitive to the presence of dangling bonds. Non-radiative recombination is shown to occur by electron tunnelling at low temperature and by diffusion and capture at high temperature. The evidence for a weak radiative transition of electrons trapped at dangling bonds is discussed. The luminescence properties of doped and compensated a-Si:H are shown to be dominated by the changes in dangling bond density.