| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-273 - C4-276 | |
| DOI | https://doi.org/10.1051/jphyscol:1981458 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-273-C4-276
DOI: 10.1051/jphyscol:1981458
1 University of Houston, Houston, TX 77004, U.S.A.
2 Exxon Corporate Research-Science Laboratories, Linden, NJ 07036, U.S.A.
J. Phys. Colloques 42 (1981) C4-273-C4-276
DOI: 10.1051/jphyscol:1981458
COMPUTER CALCULATION OF SCATTERING INTENSITY FOR DISORDERED MOLYBDENUM DISULFIDE
F.Z. Chien1, S.C. Moss1, K.S. Liang2 and R.R. Chianelli21 University of Houston, Houston, TX 77004, U.S.A.
2 Exxon Corporate Research-Science Laboratories, Linden, NJ 07036, U.S.A.
Abstract
We present computer calculations of the Deybe interference function of "poorly crystalline" MoS2 for several model cases assigning specific features of the measured intensity to specific model aspects. Most obvious among these is the number of MoS2 sandwich layers. In addition both layers extent and relative rotation or tilt appear to be neccessary structural parameters. The measured interference patterns, which change continually on annealing the as-prepared material, may thereby be understood through the progressive increase in both the in plane and perpendicular correlation range and the attendant removal of defects.