| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-151 - C4-154 | |
| DOI | https://doi.org/10.1051/jphyscol:1981430 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-151-C4-154
DOI: 10.1051/jphyscol:1981430
Laboratoire de Physique des Solides, Université Pierre et Marie Curie, Tour 13, 4, place Jussieu, 75230 Paris Cedex 05, France
J. Phys. Colloques 42 (1981) C4-151-C4-154
DOI: 10.1051/jphyscol:1981430
CONDUCTIVITY MEASUREMENTS ON UHV DEPOSITED AMORPHOUS SILICON
P. Thomas and J.C. FlachetLaboratoire de Physique des Solides, Université Pierre et Marie Curie, Tour 13, 4, place Jussieu, 75230 Paris Cedex 05, France
Abstract
Conductivity has been investigated on UHV deposited a-Si thick films as a function of spin concentration. Results are analysed using Mott's VRH theory and can be described by laws of the form σ = σ0 exp -(T0/T)1/4 The variations of T0 and σ0 with spin concentration are presented. Relations between ESR signal linewidth, longitudinal relaxation time T1, and conductivity are investigated. In addition to a spin-lattice relaxation rate process of the form T-11 α T we evidence another contribution which is proportional to dc conductivity.