| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-877 - C4-880 | |
| DOI | https://doi.org/10.1051/jphyscol:19814192 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-877-C4-880
DOI: 10.1051/jphyscol:19814192
1 Laboratoire de Chimie Physique, associé au C.N.R.S. n° 176, Université Paris VI, 11, rue Pierre et Marie Curie - 75231 Paris Cedex 05, France
2 Laboratoire d'Optique des Solides, Equipe de Recherche associée au C.N.R.S. n° 462, Université Paris VI, 4, place Jussieu - 75230 Paris Cedex 05, France
J. Phys. Colloques 42 (1981) C4-877-C4-880
DOI: 10.1051/jphyscol:19814192
DISORDER EFFECTS ON GaP CORE LEVELS STUDIED BY ELECTRON SPECTROSCOPIES
G. Dufour1, E. Belin1, C. Senemaud1, A. Gheorghiu2 and M.L. Theye21 Laboratoire de Chimie Physique, associé au C.N.R.S. n° 176, Université Paris VI, 11, rue Pierre et Marie Curie - 75231 Paris Cedex 05, France
2 Laboratoire d'Optique des Solides, Equipe de Recherche associée au C.N.R.S. n° 462, Université Paris VI, 4, place Jussieu - 75230 Paris Cedex 05, France
Abstract
A study by X-ray induced photoelectron and Auger electron spectroscopies of P and Ga core levels from flash-evaporated crystalline and amorphous Gap films is presented. Beside the effects of contamination the results indicate the existence of partial chemical disorder in the amorphous material.