Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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Page(s) | C4-873 - C4-876 | |
DOI | https://doi.org/10.1051/jphyscol:19814191 |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-873-C4-876
DOI: 10.1051/jphyscol:19814191
Department of Physics, The Pennsylvania State University, University Park, PA 16802, U.S.A.
J. Phys. Colloques 42 (1981) C4-873-C4-876
DOI: 10.1051/jphyscol:19814191
OPTICAL ABSORPTION AND STRUCTURAL ORDER IN SPUTTERED AMORPHOUS PHOSPHORUS
R.J. Pomian, L.J. Pilione and J.S. LanninDepartment of Physics, The Pennsylvania State University, University Park, PA 16802, U.S.A.
Abstract
Optical absorption measurements are reported for rf sputtered a-P films prepared under conditions of variable substrate temperature. Variations in the optical gap with Ts are similar to changes in the Raman scattering and x-ray diffraction spectra. The results suggest that intermediate-range order plays an important role for the structural, vibrational and optical properties for more ordered a-P films. Photostructural effects in As-chalcogenides which exhibit analogous behavior also suggest modifications of intermediate-range order.