| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-277 - C5-280 | |
| DOI | https://doi.org/10.1051/jphyscol:1987560 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-277-C5-280
DOI: 10.1051/jphyscol:1987560
School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta, GA 30332, U.S.A.
J. Phys. Colloques 48 (1987) C5-277-C5-280
DOI: 10.1051/jphyscol:1987560
THE NATURE OF THE ELECTRON IMPACT IONIZATION ENHANCEMENT IN A MULTIQUANTUM WELL STRUCTURE : A NUMERICAL AND ANALYTICAL APPROACH
K. BRENNAN et YANG WANGSchool of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta, GA 30332, U.S.A.
Abstract
We present both numerical and analytical calculations verifying the electron impact ionization enhancement in multiquantum well structures. Owing to the inherent nonlinearity of the impact ionization process and the existence of a threshold energy, the electron ionization rate is always enhanced within the narrow gap layer over its corresponding bulk rate. Depending upon the extent of the enhancement, the applied field strength, and the dev ice geometry, the net superlattice ionization rate can be greater than the weighted average of the constituent bulk rates.