| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-239 - C5-242 | |
| DOI | https://doi.org/10.1051/jphyscol:1987550 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-239-C5-242
DOI: 10.1051/jphyscol:1987550
1 NRL-NRC Research Associate
2 Naval Research Laboratory, Washington, DC 20375, U.S.A.
3 Martin Marietta, Baltimore, MD 21227, U.S.A.
J. Phys. Colloques 48 (1987) C5-239-C5-242
DOI: 10.1051/jphyscol:1987550
FAR INFRARED MAGNETO-ABSORPTION STUDY OF BARRIER IMPURITIES AND SCREENING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS
E. GLASER1, B.V. SHANABROOK2, R.J. WAGNER2, R.L. HAWKINS1, W.J. MOORE2 et D. MUSSER31 NRL-NRC Research Associate
2 Naval Research Laboratory, Washington, DC 20375, U.S.A.
3 Martin Marietta, Baltimore, MD 21227, U.S.A.
Abstract
Far infrared magneto-absorption experiments have been performed at 4.2K on MBE-grown GaAs/AlGaAs MQW heterostructures that were selectively doped with Si donors in the centers of the quantum wells and barrier layers. Data were obtained for several values of dopant concentration in the barriers in order to study in detail the binding of electrons in the quantum wells to positively charged ions in the barriers and the effects of the screening of the Coulomb interaction by free carriers. The results are compared with recent calculations.