| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
|
|
|---|---|---|
| Page(s) | C5-85 - C5-92 | |
| DOI | https://doi.org/10.1051/jphyscol:1987514 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-85-C5-92
DOI: 10.1051/jphyscol:1987514
1 NTT Electrical Communications Laboratories, Tokyo 180, Japan
2 Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, F.R.G.
J. Phys. Colloques 48 (1987) C5-85-C5-92
DOI: 10.1051/jphyscol:1987514
ELECTRIC FIELD EFFECTS ON EXCITONS IN Alx Ga1-x As QUANTUM WELLS AND THEIR APPLICATIONS TO OPTOELECTRONIC DEVICES
S. TARUCHA1 et K. PLOOG21 NTT Electrical Communications Laboratories, Tokyo 180, Japan
2 Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, F.R.G.
Abstract
This paper describes our recent work on electric field effects on excitons in AlGaAs/GaAs quantum wells. We discuss the large change of optical absorption at the lasing wavelength of a multiple-quantum-well waveguide induced by the Stark effect, the absorption saturation of excitons controlled by the Stark effect, and the quenching of excitonic luminescence induced by resonance effects of electrons. In addition, the applications of these features to fabricate an optical waveguide modulator monolithically integrated with a multiple-quantum-well laser diode and a voltage-controlled bistable laser are reported.