| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-235 - C5-238 | |
| DOI | https://doi.org/10.1051/jphyscol:1987549 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-235-C5-238
DOI: 10.1051/jphyscol:1987549
1 Naval Research Laboratory , Washington, DC 20375, U.S.A.
2 NRL-NRC Research Associate
3 IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A.
4 Columbia University, EE Dept, New York, NY 10027, U.S.A.
J. Phys. Colloques 48 (1987) C5-235-C5-238
DOI: 10.1051/jphyscol:1987549
OPTICAL PROPERTIES OF GaAs/AlGaAs MULTIPLE QUANTUM WELLS GROWN IN THE [111] CRYSTALLOGRAPHIC DIRECTION
B.V. SHANABROOK1, O. J. GLEMBOCKI1, D.A. BROIDO2, L. VIÑA3 et W.I. WANG4, 31 Naval Research Laboratory , Washington, DC 20375, U.S.A.
2 NRL-NRC Research Associate
3 IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A.
4 Columbia University, EE Dept, New York, NY 10027, U.S.A.
Abstract
Photoreflectance measurements have been performed on high quality GaAs/AlGaAs multiple quantum wells grown along the [111] crystallographic direction. These measurements indicate that the heavy and light hole masses are 0.8 and 0.08, respectively, in the [111] direction of bulk GaAs. These values are in good agreement with the Luttinger parameters for GaAs. In addition, this investigation indicates that the band alignments of GaAs and AlGaAs are not very sensitive to crystallographic orientation.