| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-791 - C4-794 | |
| DOI | https://doi.org/10.1051/jphyscol:19814173 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-791-C4-794
DOI: 10.1051/jphyscol:19814173
Semiconductor Phys. Lab., Department of Phys., Zhongshan (Sun Yatsen) University, Guangzhou, Republic of China
J. Phys. Colloques 42 (1981) C4-791-C4-794
DOI: 10.1051/jphyscol:19814173
EFFECTS OF ARGON ON THE PROPERTIES OF RF SPUTTERED AMORPHOUS SILICON
Peng Shao-qi, Yu Bing Qai, Zhang Pei Xian and Ye Xian JingSemiconductor Phys. Lab., Department of Phys., Zhongshan (Sun Yatsen) University, Guangzhou, Republic of China
Abstract
The Effects of argon on the properties of rf sputtered amorphous silicon film have been investigated. As the sputtering argon pressure is increased from 2 to 20 mTorr, the content of argon in the amorphous silicon film increases apparently (Argon/Silicon : from 10-2 to 5 x 10-2). The other properties measured as a function of argon pressure PAr show that as the PAr is increased, the photoconductivity, resistivity (300K), conductivity activation energy and optical gap increase also, while the spin density deacreses. It is apparent that the effects of argon pressure on the properties of rf sputtered amorphous silicon are due to various factors. The role of argon component in the amorphous silicon material may be important.