| Numéro |
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-154 - C6-154 | |
| DOI | https://doi.org/10.1051/jphyscol:1989614 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-154-C6-154
DOI: 10.1051/jphyscol:1989614
Laboratoire des Microstructures, CNRS-ESPCI, 10, rue Vauquelin, F-75231 Paris Cedex, France
International Workshop
J. Phys. Colloques 50 (1989) C6-154-C6-154
DOI: 10.1051/jphyscol:1989614
ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON BY THE S.T.E.B.I.C. METHOD
C. CABANEL et J.-Y. LAVALLaboratoire des Microstructures, CNRS-ESPCI, 10, rue Vauquelin, F-75231 Paris Cedex, France
Abstract
In order to be able to analyse in TEM-STEM the crystallochemistry of recombining defects in p-type polysilicon (L = 100 µm), we have developed the scanning transmission electron beam induced current technique (STEBIC) originally proposed by Sparrow and Valdre. The key point is the making of a thin Schottky diode which must be transparent to electrons. This is realized by means of an Al-Ga ohmic contact, ion milling and an Al or Ag Schottky junction. Under such conditions an optimum lateral resolution of 100 nm is obtained and transmission imaging as well as diffraction , microdiffraction, X-ray microanalysis and EELS can be carried out concurrenty.