| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-179 - C4-182 | |
| DOI | https://doi.org/10.1051/jphyscol:1988436 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-179-C4-182
DOI: 10.1051/jphyscol:1988436
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-179-C4-182
DOI: 10.1051/jphyscol:1988436
NONSELECTIVE W/WSix -CVD TECHNOLOGY FOR LOW RESISTANCE VIA PLUGS ON ALUMINUM
E. BERTAGNOLLI, C. WIECZOREK, B. HOFFMANN et H. SCHABERSiemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
Abstract
By reducing the thermal budget of a nonselective W/WSix-CVD technology, a via filling process completely compatible with a conventional aluminum track scheme has been obtained. A specific via resistance in the range of a few 10-8 Ωcm2 was realized. Hillock formation was suppressed significantly. No fluorine pile-up was found at the WSix-/AlSiTi-interface so the formation of an AlF3-interlayer has been avoided successfully.