| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-791 - C4-794 | |
| DOI | https://doi.org/10.1051/jphyscol:19884166 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-791-C4-794
DOI: 10.1051/jphyscol:19884166
The Czech Technical University of Prague, Faculty of Electrical Engineering, Suchbátarova 2, 166 27 Praha 6, Czechoslovakia
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-791-C4-794
DOI: 10.1051/jphyscol:19884166
MOSFET GATE CURRENT MODELLING USING MONTE-CARLO METHOD
J. VOVES et J. VESELYThe Czech Technical University of Prague, Faculty of Electrical Engineering, Suchbátarova 2, 166 27 Praha 6, Czechoslovakia
Abstract
The new technique for determining the probability of hot-electron travel through the gate oxide is presented. The technique is based on the Monte Carlo method and is used in MOSFET gate current modelling. The calculated values of gate current are compared with experimental results from direct measurements on MOSFET test chips.