| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-63 - C4-66 | |
| DOI | https://doi.org/10.1051/jphyscol:1988412 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-63-C4-66
DOI: 10.1051/jphyscol:1988412
Chalmers University of Technology, Department of Solid State Electronics, S-412 96 Göteborg, Sweden
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-63-C4-66
DOI: 10.1051/jphyscol:1988412
ELECTRONIC PROPERTIES OF SILICON INTERFACES PREPARED BY DIRECT BONDING
S. BENGTSSON et O. ENGSTRÖMChalmers University of Technology, Department of Solid State Electronics, S-412 96 Göteborg, Sweden
Abstract
The influence of interface charges on the properties of Si-Si and Si-SiO2 interfaces prepared by direct bonding has been investigated. Surface potentials of N-N and P-P interfaces and recombination currents in P-N junctions depend on surface and heat treatments. In both cases lower magnitudes were measured in samples pre-treated in HF compared to samples pre-treated in HNO3. Bonded Si-SiO2 interfaces with interface state densities of about 1011 cm-2 eV-1 and low flatband voltages have been achieved.