3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-117-C5-120
DOI: 10.1051/jphyscol:1987521
PIEZOREFLECTANCE CHARACTERIZATION OF GaAs/AlAs MULTIPLE QUANTUM WELLS
K. ONABE, Y. IDE et M. SUGIMOTOOpto-Electronics Research Laboratories, NEC Corporation 1-1, Miyazaki 4-chome, Miyamae-ku, Kawasaki, 213 Japan
Abstract
Piezoreflectance characterization has been applied for GaAs/AlAs multiple quantum wells. The room-temperature spectra have revealed sharp reflectance features due to interband transitions in the quantum wells, as well as in the AlAs barrier. The spectral features are described in terms of the strain-induced interband energy shifts.